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Diffusion and criticality in undoped graphene with resonant scatterers

Diffusion and criticality in undoped graphene with resonant scatterers
Autor:

P. M. Ostrovsky, M. Titov, S. Bera, I. V. Gornyi, A. D. Mirlin

Links:
Quelle:

Phys. Rev. Lett. 105, 266803 (2010)

Datum: 16 June 2010

A general theory is developed to describe graphene with an arbitrary number of isolated impurities. The theory provides a basis for an efficient numerical analysis of the charge transport and is applied to calculate the Dirac-point conductivity σ of graphene with resonant scatterers. In the case of smooth resonant impurities the symmetry class is identified as DIII and σ grows logarithmically with increasing impurity concentration. For vacancies (or strong on-site potential impurities, class BDI) σ saturates at a constant value that depends on the vacancy distribution among two sublattices.