Diffusion and criticality in undoped graphene with resonant scatterers
P. M. Ostrovsky, M. Titov, S. Bera, I. V. Gornyi, A. D. Mirlin
- Datum: 16 June 2010
A general theory is developed to describe graphene with an arbitrary number of isolated impurities. The theory provides a basis for an efficient numerical analysis of the charge transport and is applied to calculate the Dirac-point conductivity σ of graphene with resonant scatterers. In the case of smooth resonant impurities the symmetry class is identified as DIII and σ grows logarithmically with increasing impurity concentration. For vacancies (or strong on-site potential impurities, class BDI) σ saturates at a constant value that depends on the vacancy distribution among two sublattices.